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this is information on a product in full production. april 2014 docid024026 rev 6 1/18 18 stf24n60m2, STFI24N60M2, stfw24n60m2 n-channel 600 v, 0.168 typ., 18 a mdmesh ii plus? low q g power mosfets in to-220fp, i 2 pakfp and to-3pf packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications ? llc converters, resonant converters description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. d(2) g(1) s(3) am01476v1 to-220fp i 2 pakfp 1 2 3 1 2 3 (to-281) 1 1 1 1 2 3 to-3pf order codes v ds @ t jmax r ds(on) max i d stf24n60m2 650 v 0.19 18 a STFI24N60M2 stfw24n60m2 table 1. device summary order codes marking package packaging stf24n60m2 24n60m2 to-220fp tube STFI24N60M2 i 2 pakfp (to-281) stfw24n60m2 to-3pf www.st.com
contents stf24n60m2, STFI24N60M2, stfw24n60m2 2/18 docid024026 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 to-220fp, stf24n60m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 i2pakfp, STFI24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-3pf, stfw24n60m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024026 rev 6 3/18 stf24n60m2, STFI24N60M2, stfw24n60m2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp, i 2 pakfp to-3pf v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 12 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 72 (1) a p tot total dissipation at t c = 25 c 30 48 w dv/dt (3) 3. i sd 18 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 3500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220fp, i 2 pakfp to-3pf r thj-case thermal resistance junction-case max 4.2 2.6 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 180 mj
electrical characteristics stf24n60m2, STFI24N60M2, stfw24n60m2 4/18 docid024026 rev 6 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 9 a 0.168 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1060 - pf c oss output capacitance - 55 - pf c rss reverse transfer capacitance -2.2-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 258 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 16 ) -29-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 12 - nc
docid024026 rev 6 5/18 stf24n60m2, STFI24N60M2, stfw24n60m2 electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 16 and 21 ) -14-ns t r rise time - 9 - ns t d(off) turn-off delay time - 60 - ns t f fall time - 15 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 18 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 72 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) -332 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 24 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 18 ) -450 ns q rr reverse recovery charge - 5.5 c i rrm reverse recovery current - 25 a
electrical characteristics stf24n60m2, STFI24N60M2, stfw24n60m2 6/18 docid024026 rev 6 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15462v1 figure 4. safe operating area for to-3pf figure 5. thermal impedance for to-3pf figure 6. output characteristics figure 7. transfer characteristics i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 100 gipg030420141648sa single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 -2 10 -3 10 -2 10 -1 c 10 -1 10 0 gipg030420141703sa i d 30 20 10 0 0 10 v ds (v) (a) 5 15 40 v gs = 4 v v gs = 5 v v gs = 7 v v gs = 8, 9, 10 v 5 15 25 35 v gs = 6 v 20 am15470v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 10 20 v ds = 17 v 25 30 35 40 am15469v1
docid024026 rev 6 7/18 stf24n60m2, STFI24N60M2, stfw24n60m2 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480 v i d =18 a 25 300 200 100 0 400 500 v ds (v) v ds 12 30 600 am15471v1 r ds(on) 0.172 0.168 0.164 0.160 0 8 i d (a) ( ) 4 12 0.176 v gs =10v 16 am15465v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15665v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 5 500 600 6 7 8 am15472v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 i d = 250 a 1.1 am15473v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 9 a 2.3 v gs = 10 v am15464v1
electrical characteristics stf24n60m2, STFI24N60M2, stfw24n60m2 8/18 docid024026 rev 6 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1 1.2 t j =-50c t j =150c t j =25c 12 14 16 1.4 am15468v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.05 1.07 1.03 i d = 1ma 1.09 1.11 am15466v1
docid024026 rev 6 9/18 stf24n60m2, STFI24N60M2, stfw24n60m2 test circuits 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf24n60m2, STFI24N60M2, stfw24n60m2 10/18 docid024026 rev 6 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024026 rev 6 11/18 stf24n60m2, STFI24N60M2, stfw24n60m2 package mechanical data 4.1 to-220fp, stf24n60m2 figure 22. to-220fp drawing 7012510_rev_k_b
package mechanical data stf24n60m2, STFI24N60M2, stfw24n60m2 12/18 docid024026 rev 6 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024026 rev 6 13/18 stf24n60m2, STFI24N60M2, stfw24n60m2 package mechanical data 4.2 i 2 pakfp, STFI24N60M2 figure 23. i 2 pakfp (to-281) drawing rev!
package mechanical data stf24n60m2, STFI24N60M2, stfw24n60m2 14/18 docid024026 rev 6 table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50
docid024026 rev 6 15/18 stf24n60m2, STFI24N60M2, stfw24n60m2 package mechanical data 4.3 to-3pf, stfw24n60m2 figure 24. to-3pf drawing 7627132_d
package mechanical data stf24n60m2, STFI24N60M2, stfw24n60m2 16/18 docid024026 rev 6 table 11. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
docid024026 rev 6 17/18 stf24n60m2, STFI24N60M2, stfw24n60m2 revision history 5 revision history table 12. document revision history date revision changes 10-dec-2012 1 first release. 20-dec-2012 2 added mosfet dv/dt ruggedness in table 2: absolute maximum ratings . 14-jan-2013 3 modified: figure 16 , 17 28-may-2013 4 ? modified: figure 16 , 17 , 18 and 19 ? minor text changes 28-feb-2014 5 ? modified: r thj-case value in table 3 ? modified: figure 12 ? minor text changes 07-apr-2014 6 ? added: to-3pf package ? added: section 4.3: to-3pf, stfw24n60m2 ? minor text changes
stf24n60m2, STFI24N60M2, stfw24n60m2 18/18 docid024026 rev 6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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